Two-dimensional heterogeneous photonic bandedge laser

We proposed and realized a two-dimensional (2D) photonic bandedge laser surrounded by the photonic bandgap. The heterogeneous photonic crystal structure consists of two triangular lattices of the same lattice constant with different air hole radii. The photonic crystal laser was realized by room-temperature optical pumping of air-bridge slabs of InGaAsP quantum wells emitting at 1.55 micrometer. The lasing mode was identified from its spectral positions and polarization directions. A low threshold incident pump power of 0.24mW was achieved. The measured characteristics of the photonic crystal lasers closely agree with the results of real space and Fourier space calculations based on the finite-difference time-domain method.Comment: 14 pages, 4 figure

Microstructural evolution in m-plane GaN growth on m-plane SiC

This letter presents a study on the nucleation and microstructural evolution of m-plane GaN epilayers on m-plane SiC substrates using high-temperature AlN buffer layers. Controlled growth interruptions were carried out to render snapshots of heteroepitaxial dynamics. It was discovered that island coalescence results in an inhomogeneous mosaic tilt along the c-axis. Mesoscopic study of nucleation evolution helps elucidate the origin of commonly observed surface undulation and striation, which is attributed to concave growth due to the coalescence of trapezoidal islands upon contact. A model correlating microstructural defects with optical properties is proposed to explain the observed pattern in spatially resolved cathodoluminescence mapping.open221

Effect of growth interruption on optical properties of In-rich InGaN/GaN single quantum well structures

In-rich InGaN/GaN single quantum well (SQW) structures with and without growth interruption (GI) were successfully grown on sapphire substrates by metal-organic chemical vapor deposition. The optical properties were systematically investigated by photoluminescence (PL), selectively excited PL, PL excitation (PLE), and cathodoluminescence (CL) techniques. The integrated PL intensity of the main In-rich InGaN emissions for the sample grown without GI decreased only by a factor of 15.5 when the temperature increased from 11 to 300 K, while that of the sample with GI decreased by about 1040, showing very good quantum efficiency for the sample without GI. The In-rich InGaN SQW emissions have been verified by selectively excited PL spectra and by the different PLE absorption edges. CL observations showed that the epilayer of the sample without GI agglomerated together to form clusters due to the large lattice and thermal mismatches with GaN, which confine the carriers in the clusters and ensure the relatively high quantum efficiency of the sample. The sample with GI showed relatively smooth surface with cluster structures jointed together, which gives two-dimensional QW environment in its energy band structure, and its optical emission is more sensitive to temperatures than that of the sample grown without GI.open7

In-situ fabrication of cobalt-doped SrFe2As2 thin films by using pulsed laser deposition with excimer laser

The remarkably high superconducting transition temperature and upper critical field of iron(Fe)-based layered superconductors, despite ferromagnetic material base, open the prospect for superconducting electronics. However, success in superconducting electronics has been limited because of difficulties in fabricating high-quality thin films. We report the growth of high-quality c-axis-oriented cobalt(Co)-doped SrFe2As2 thin films with bulk superconductivity by using an in-situ pulsed laser deposition technique with a 248-nm-wavelength KrF excimer laser and an arsenic(As)-rich phase target. The temperature and field dependences of the magnetization showing strong diamagnetism and transport critical current density with superior Jc-H performance are reported. These results provide necessary information for practical applications of Fe-based superconductors.Comment: 8 pages, 3figures. to be published at Appl. Phys. Let

High resolution crystal structure of PedB: a structural basis for the classification of pediocin-like immunity proteins

<p>Abstract</p> <p>Background</p> <p>Pediocin-like bacteriocins, ribosomally-synthesized antimicrobial peptides, are generally coexpressed with cognate immunity proteins in order to protect the bacteriocin-producer from its own bacteriocin. As a step for understanding the mode of action of immunity proteins, we determined the crystal structure of PedB, a pediocin-like immunity protein conferring immunity to pediocin PP-1.</p> <p>Results</p> <p>The 1.6 Å crystal structure of PedB reveals that PedB consists of an antiparallel four-helix bundle with a flexible C-terminal end. PedB shows structural similarity to an immunity protein against enterocin A (EntA-im) but some disparity to an immunity protein against carnobacteriocin B2 (ImB2) in both the C-terminal conformation and the local structure constructed by α3, α4, and their connecting loop. Structure-inspired mutational studies reveal that deletion of the last seven residues of the C-terminus of PedB almost abolished its immunity activity.</p> <p>Conclusion</p> <p>The fact that PedB, EntA-im, and ImB2 share a four-helix bundle structure strongly suggests the structural conservation of this motif in the pediocin-like immunity proteins. The significant difference in the core structure and the C-terminal conformation provides a structural basis for the classification of pediocin-like immunity proteins. Our mutational study using C-terminal-shortened PedBs and the investigation of primary sequence of the C-terminal region, propose that several polar or charged residues in the extreme C-terminus of PedB which is crucial for the immunity are involved in the specific recognition of pediocin PP-1.</p

Validation and Reliability of a Smartphone Application for the International Prostate Symptom Score Questionnaire: A Randomized Repeated Measures Crossover Study

Background: Smartphone-based assessment may be a useful diagnostic and monitoring tool for patients. There have been many attempts to create a smartphone diagnostic tool for clinical use in various medical fields but few have demonstrated scientific validity. Objective: The purpose of this study was to develop a smartphone application of the International Prostate Symptom Score (IPSS) and to demonstrate its validity and reliability. Methods: From June 2012 to May 2013, a total of 1581 male participants (>= 40 years old), with or without lower urinary tract symptoms (LUTS), visited our urology clinic via the health improvement center at Soonchunhyang University Hospital (Republic of Korea) and were enrolled in this study. A randomized repeated measures crossover design was employed using a smartphone application of the IPSS and the conventional paper form of the IPSS. Paired t test under a hypothesis of non-inferior trial was conducted. For the reliability test, the intraclass correlation coefficient (ICC) was measured. Results: The total score of the IPSS (P=.289) and each item of the IPSS (P=.157-1.000) showed no differences between the paper version and the smartphone version of the IPSS. The mild, moderate, and severe LUTS groups showed no differences between the two versions of the IPSS. A significant correlation was noted in the total group (ICC=.935, P<.001). The mild, moderate, and severe LUTS groups also showed significant correlations (ICC=.616,.549, and .548 respectively, all P<.001). There was selection bias in this study, as only participants who had smartphones could participate. Conclusions: The validity and reliability of the smartphone application version were comparable to the conventional paper version of the IPSS. The smartphone application of the IPSS could be an effective method for measuring lower urinary tract symptoms.X1144Ysciescopu

In-rich InGaN/GaN quantum wells grown by metal-organic chemical vapor deposition

Growth mechanism of In-rich InGaN/GaN quantum wells (QWs) was investigated. First, we examined the initial stage of InN growth on GaN template considering strain-relieving mechanisms such as defect generation, islanding, and alloy formation at 730 degrees C. It was found that, instead of formation of InN layer, defective In-rich InGaN layer with thickness fluctuations was formed to relieve large lattice mismatch over 10% between InN and GaN. By introducing growth interruption (GI) before GaN capping at the same temperature, however, atomically flat InGaN/GaN interfaces were observed, and the quality of In-rich InGaN layer was greatly improved. We found that decomposition and mass transport processes during GI in InGaN layer are responsible for this phenomenon. There exists severe decomposition in InGaN layer during GI, and a 1-nm-thick InGaN layer remained after GI due to stronger bond strength near the InGaN/GaN interface. It was observed that the mass transport processes actively occurred during GI in InGaN layer above 730 degrees C so that defect annihilation in InGaN layer was greatly enhanced. Finally, based on these experimental results, we propose the growth mechanism of In-rich InGaN/GaN QWs using GI.open9